8201002EX
Page Mode DRAM, 64KX1, 150ns, NMOS, CDIP16Manufacturer: Advanced Micro Devices
Categories: DRAMs
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Advanced Micro Devices 8201002EX is a 65,536 x 1 bit (64K x 1) NMOS Page Mode DRAM, offering a maximum access time of 150ns. This component features asynchronous operation and supports FAST PAGE, RAS ONLY/CAS BEFORE RAS, and HIDDEN REFRESH modes for efficient memory access. The 8201002EX is housed in a 16-lead Ceramic Dual In-line Package (CDIP) with through-hole terminals. Its operating temperature range is -55°C to +110°C, with a supply voltage range of 4.5V to 5.5V. This memory device is well-suited for applications requiring high-speed data manipulation in industrial and telecommunications systems.
Additional Information
Series: 8201002EXRoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | NMOS |
| Access_Mode | FAST PAGE |
| Access_Time_Max | 150.0000000000000000 |
| Additional_Feature | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
| JESD_30_Code | R-GDIP-T16 |
| Memory_Density | 65536.0000000000000000 |
| Memory_IC_Type | PAGE MODE DRAM |
| Memory_Organization | 64KX1 |
| Memory_Width | 1 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 16 |
| Number_of_Words | 65536.0000000000000000 |
| Number_of_Words_Code | 64k |
| Operating_Mode | Asynchronous |
| Operating_Temperature_Max | 110.0 |
| Operating_Temperature_Min | -55.0 |
| Package_Body_Material | CERAMIC, GLASS-SEALED |
| Package_Code | DIP |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Supply_Voltage_Max | 5.50000 |
| Supply_Voltage_Min | 4.50000 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Position | Dual |
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