ALD111933MAL
MOSFET 2N-CH 10.6V 8MSOPManufacturer: Advanced Linear Devices Inc.
Categories: FET, MOSFET Arrays
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Advanced Linear Devices Inc. EPAD® ALD111933MAL is a dual N-channel MOSFET array designed for precision analog applications. This surface-mount component, housed in an 8-MSOP package, features a drain-to-source voltage (Vdss) of 10.6V and a maximum power dissipation of 500mW. The device offers matched pairs with an Rds On of 500 Ohms at 5.9V, and a gate threshold voltage (Vgs(th)) of 3.35V at 1µA. Input capacitance (Ciss) is 2.5pF at 5V. The ALD111933MAL is suitable for use in the industrial and consumer electronics sectors.
Additional Information
Series: EPAD®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-TSSOP, 8-MSOP (0.118"", 3.00mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) Matched Pair |
| Operating Temperature | 0°C ~ 70°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 500mW |
| Drain to Source Voltage (Vdss) | 10.6V |
| Current - Continuous Drain (Id) @ 25°C | - |
| Input Capacitance (Ciss) (Max) @ Vds | 2.5pF @ 5V |
| Rds On (Max) @ Id, Vgs | 500Ohm @ 5.9V |
| Gate Charge (Qg) (Max) @ Vgs | - |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 3.35V @ 1µA |
| Supplier Device Package | 8-MSOP |