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ALD111933MAL

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ALD111933MAL

MOSFET 2N-CH 10.6V 8MSOP

Manufacturer: Advanced Linear Devices Inc.

Categories: FET, MOSFET Arrays

Quality Control: Learn More

Advanced Linear Devices Inc. EPAD® ALD111933MAL is a dual N-channel MOSFET array designed for precision analog applications. This surface-mount component, housed in an 8-MSOP package, features a drain-to-source voltage (Vdss) of 10.6V and a maximum power dissipation of 500mW. The device offers matched pairs with an Rds On of 500 Ohms at 5.9V, and a gate threshold voltage (Vgs(th)) of 3.35V at 1µA. Input capacitance (Ciss) is 2.5pF at 5V. The ALD111933MAL is suitable for use in the industrial and consumer electronics sectors.

Additional Information

Series: EPAD®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / Case8-TSSOP, 8-MSOP (0.118"", 3.00mm Width)
Mounting TypeSurface Mount
Configuration2 N-Channel (Dual) Matched Pair
Operating Temperature0°C ~ 70°C (TJ)
TechnologyMOSFET (Metal Oxide)
Power - Max500mW
Drain to Source Voltage (Vdss)10.6V
Current - Continuous Drain (Id) @ 25°C-
Input Capacitance (Ciss) (Max) @ Vds2.5pF @ 5V
Rds On (Max) @ Id, Vgs500Ohm @ 5.9V
Gate Charge (Qg) (Max) @ Vgs-
FET Feature-
Vgs(th) (Max) @ Id3.35V @ 1µA
Supplier Device Package8-MSOP

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