ALD110908ASAL
MOSFET 2N-CH 10.6V 8SOICManufacturer: Advanced Linear Devices Inc.
Categories: FET, MOSFET Arrays
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Advanced Linear Devices Inc. EPAD® ALD110908ASAL is a dual N-channel MOSFET array featuring matched pairs. This 8-SOIC packaged component offers a drain-source voltage (Vdss) of 10.6V and continuous drain currents (Id) of 12mA and 3mA at 25°C. The MOSFET array has a maximum power dissipation of 500mW and a drain-source on-resistance (Rds On) of 500 Ohms at 4.8V. Key electrical characteristics include an input capacitance (Ciss) of 2.5pF at 5V and a gate threshold voltage (Vgs(th)) of 810mV at 1µA. Designed for surface mounting, this component operates within a temperature range of 0°C to 70°C. The ALD110908ASAL is utilized in applications such as precision analog circuits and signal conditioning.
Additional Information
Series: EPAD®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 40 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) Matched Pair |
| Operating Temperature | 0°C ~ 70°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 500mW |
| Drain to Source Voltage (Vdss) | 10.6V |
| Current - Continuous Drain (Id) @ 25°C | 12mA, 3mA |
| Input Capacitance (Ciss) (Max) @ Vds | 2.5pF @ 5V |
| Rds On (Max) @ Id, Vgs | 500Ohm @ 4.8V |
| Gate Charge (Qg) (Max) @ Vgs | - |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 810mV @ 1µA |
| Supplier Device Package | 8-SOIC |
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