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MT53E512M32D1ZW-046 AAT:B





The MT53E512M32D1ZW-046 AAT:B from Micron Technology Inc. represents a high-grade memory solution within the Automotive, AEC-Q100 series, signifying its compliance with stringent automotive industry standards. This product is delivered in a 200-TFBGA package, designed for surface mount technology, underscoring its suitability for compact and high-density applications.

Crafted with a focus on robustness and reliability, this memory component operates in a wide temperature range from -40°C to 105°C, making it an ideal choice for demanding automotive environments. Its package, a 200-TFBGA (10×14.5), is specifically engineered to meet the challenging requirements of automotive applications, including advanced driver-assistance systems (ADAS), infotainment, and other in-vehicle electronics that necessitate high-reliability memory storage solutions.

The MT53E512M32D1ZW-046 AAT:B is categorized under the Memory segment, reflecting its capability to store and retrieve digital data efficiently. The active status of this part signifies its availability and ongoing support for current and new designs, ensuring long-term reliability and performance.

Engineers and designers in the automotive industry can leverage this memory component’s advanced specifications and automotive-grade certification to optimize their systems for enhanced performance, storage capacity, and durability under extreme conditions. Its technical sophistication and operational resilience make it an integral element for future-forward automotive applications, driving innovation and safety on the roads.

Additional information

Additional Information

Series: Automotive, AEC-Q100
RoHS Status: unknown
Manufacturer Lead Time: 4 week(s)
Product Status: Active
Packaging: Box


Not Available

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Technical Details:
Package / Case200-TFBGA
Mounting TypeSurface Mount
Memory Size16Gbit
Memory TypeVolatile
Operating Temperature-40°C ~ 105°C (TC)
Voltage - Supply1.06V ~ 1.17V
TechnologySDRAM - Mobile LPDDR4X
Clock Frequency2.133 GHz
Memory FormatDRAM
Supplier Device Package200-TFBGA (10x14.5)
Part StatusActive
Write Cycle Time - Word, Page18ns
Memory InterfaceParallel
Access Time3.5 ns
Memory Organization512M x 32
ProgrammableNot Verified
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