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The MT29F2G08ABBEAH4-IT:E TR by Micron Technology Inc. stands out as a highly reliable NAND Flash memory component, belonging to the broad category of memory devices in the electronic parts spectrum. Engineered for surface mount technology, it comes enclosed in a compact 63-VFBGA (9×11) package, encapsulated within a tape and reel (TR) packaging for streamlined assembly processes. This memory device is characterized by its robust operating temperature range of -40°C to 85°C (TA), ensuring its performance in varying environmental conditions.

Key specifications include:
– **Manufacturer:** Micron Technology Inc.
– **Package / Case:** 63-VFBGA
– **Mounting Type:** Surface Mount
– **Operating Temperature:** -40°C ~ 85°C (TA)
– **Supplier Device Package:** 63-VFBGA (9×11)
– **Part Status:** Active

Micron’s MT29F2G08ABBEAH4-IT:E TR is designed to meet the rigorous demands of a wide array of industries, including but not limited to consumer electronics, automotive applications, and industrial systems, where reliability and data integrity are paramount. This memory component ensures high-speed data transmission and efficient operation thanks to its carefully engineered architecture and Micron’s commitment to quality.

In conclusion, the MT29F2G08ABBEAH4-IT:E TR memory component by Micron Technology Inc. represents a sophisticated choice for developers and engineers looking to harness the power of NAND Flash memory in their next-generation devices and systems, offering a blend of performance, reliability, and compact form factor.

Additional information

Additional Information

RoHS Status: ROHS3 Compliant
Manufacturer Lead Time: 4 week(s)
Product Status: Active
Packaging: Tape & Reel (TR)


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Technical Details:
PackagingTape & Reel (TR)
Package / Case63-VFBGA
Mounting TypeSurface Mount
Memory Size2Gbit
Memory TypeNon-Volatile
Operating Temperature-40°C ~ 85°C (TA)
Voltage - Supply1.7V ~ 1.95V
TechnologyFLASH - NAND
Memory FormatFLASH
Supplier Device Package63-VFBGA (9x11)
Part StatusActive
Write Cycle Time - Word, Page-
Memory InterfaceParallel
Memory Organization256M x 8
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